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r 201410a 1/8 n ??? n- channel mosfet JCS13N50CT order codes ? marking ? package halogen free ? packaging device weight JCS13N50CT-o-c-n-b JCS13N50CT to-220c no tube 2.15g(typ) ? package ? main characteristics id 15 a vdss 500 v rdson@vgs=10v 0.46 qg 37 nc ? z ??? z z ups ? ? z ? z c rss ( ? 25pf) z ?? z ??? z ? dv/dt z rohs ? features z low gate charge z low c rss (typical 25pf ) z fast switching z 100% avalanche tested z improved dv/dt capability z rohs product ? order message applications z high frequency switching mode power supply z electronic ballast z ups
r JCS13N50CT (? 201410a 2/8 4??nqn absolute ratings (tc=25 ) * $?u+ #+?p?4#yl$
*drain current limited by maximum junction temperature nm ,a parameter 0 ? symbol d value ) ! unit ?p?$?u$du,#+ _ drain-source voltage v dss 500 v e24$?u+ # drain current -continuous i d t=25 t=100 15.0* a 9.4* a ??6y?$?u+ #?"? 1 ? drain current -pulse ? note 1 ? i dm 60* a ?p?$d+ _ gate-source voltage v gss 30 v )6y?l?y6?g?"? 2 ? single pulsed avalanche energy ? note 2 ? e as 1125 mj l?y+ #?"? 1 ? avalanche current ? note 1 ? i ar 15.0 a g?l?y6?g ?"? 1 ? repetitive avalanche energy ? note 1 ? e ar 19.3 mj `u1u ? ?6??+ _ ?e)[?"? 3 ? peak diode recovery dv/dt ? note 3 ? dv/dt 4.5 v/ns 5?7s)[ power dissipation p d t c =25 -derate above 25 193 w 1.61 w/
r JCS13N50CT (? 201410a 3/8 + (m? electrical characteristic nm ,a parameter 0 ? symbol #a?5 tests conditions ?? min l _ typ ?? max )! units g?(m? off ?characteristics $?$d?0s+ _ drain-source voltage bv dss i d =250 on-characteristics k+ _ gate threshold voltage v gs(th) v ds = v gs , i d =250 ? dynamic characteristics eg9+ ? input capacitance c iss v ds =25v, v gs =0v, f=1.0mh z - 1560 2090 pf eg?+ ? output capacitance c oss - 210 260 pf ? ??eg+ ? reverse transfer capacitance c rss - 25 30 pf
r JCS13N50CT (? 201410a 4/8 + (m? electrical characteristics &(m? thermal characteristic nm ,a parameter 0 ? symbol ?? value ) ! unit JCS13N50CT 41u?,x&l thermal resistance, junction to case rth(j-c) 0.72 nm ,a parameter 0 ? symbol #a?5 tests conditions ?? min l _ typ ?? max )! units ?g(m? switching ?characteristics e3k turn-on delay time t d (on) v dd =250v,i d =15a,r g =25 ? drain-source diode characteristics and maximum ratings !7 ???e24+ # maximum continuous drain-source diode forward current i s - - 15 a !7 ???6y?+ # maximum pulsed drain-source diode forward current i sm - - 60 a !7 ???e24+ # maximum continuous drain-source diode forward current v sd v gs =0v, i s =15a - 1.4 v ? ?6k reverse recovery time t rr v gs =0v, i s =15a di f /dt=100a/ ? ?
r JCS13N50CT (? 201410a 5/8 (mu?4? electrical characteristics (curves) on-region characteristics transfer characteristics on-resistance variation vs drain current and gate voltage body diode forward voltage v ariation vs. source current and tem p erature capacitance characteristics capacitance characteristics 0 2 4 6 8 10 12 0 10203040 v ds =100v v ds =250v q g toltal gate charge [nc] v gs gate source voltage[v] v ds =400v 0.1 1 10 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 25 ? c iss = c gs +c gd (c ds =shorted) c oss = c ds +c gd c rss = c gd capacitance [pf] v ds drain-source voltage [v]
r JCS13N50CT (? 201410a 6/8 (mu?4? electrical characteristics (curves) 1e-5 1e-4 1e-3 0.01 0.1 1 10 0.01 0.1 1 t 2 t 1 d=0.5 0.2 0.1 0.05 0.02 z jc (t) thermal response t 1 square w ave pulse duration [sec] single pulse 0.01 notes: 1 z jc (t)= 0 .7 2 /w m a x 2 duty factor, d=t 1 /t 2 3 t jm -t c =p dm * z jc (t) p dm breakdown voltage variation vs. tem p erature on-resistance variation vs. tem p erature maximum safe operating area maximum drain current vs. case tem p erature transient thermal response curve 25 50 75 100 125 150 0 3 6 9 12 15 i d drain current [a] t c case temperature [ ]
r JCS13N50CT (? 201410a 7/8 6 package mechanical data to-220c )! unit ? mm
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-1 note 1. jilin sino-microelectronics co., ltd sales its product either through direct sales or sales agent , thus, for customers, when ordering , please check with our company. 2. we strongly recommend customers check carefully on the trademark when buying our product, if there is any question, please don?t be hesitate to contact us. 3. please do not exceed the absolute maximum ratings of the device when circuit designing. 4. jilin sino-microelectronics co., ltd reserves the right to make changes in this specification sheet and is subject to change without prior notice. 6(2??? yk "?+ $6u?yl$@ @ ? yk,? yk?#? >+ 99 ? f?4? 132013 ? 86-432-64678411 ?,? 86-432-64665812 5% ? htu www.hwdz.com.cn uth ? 9j?f? ? yk,? yk?#? >+ 99 ? f?4? 132013 + a? 86-432-64675588 64675688 64678411-3098/3099 ?, : 86-432-64671533 contact jilin sino-microelectronics co., ltd. add: no.99 shenzhen str eet, jilin city, jilin province, china. post code: 132013 te l ? 86-432-64678411 fax ? 86-432-64665812 web site ? htu www.hwdz.com.cn uth market department add: no.99 shenzhen str eet, jilin city, jilin province, china. post code: 132013 tel: 86-432-64675588 64675688 64678411-3098/3099 fax: 86-432-64671533 to p :

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